Omar B. Mohammed, Leonard Franklin Register, Sanjay K. Banerjee. Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 129-130, IEEE, 2019. [doi]
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