The following publications are possibly variants of this publication:
- A 6 GHz, 1.8 V, divide-by-2 circuit implemented in silicon bipolar technologyC. Pala, G. Schuppener, M. Mokhtari. iscas 1999: 140-143 [doi]
- 100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOSJames Chingwei Li, Kenneth R. Elliott, David S. Matthews, Donald A. Hitko, Daniel Zehnder, Yakov Royter, Pamela R. Patterson, Tahir Hussain, Joseph F. Jensen. jssc, 44(10):2663-2670, 2009. [doi]