Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Kentaro Kawakami, Junichi Miyakoshi, Shinji Mikami, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto. A 0.3-V Operating, ::::V::::::th::-Variation-Tolerant SRAM under DVS Environment for Memory-Rich SoC in 90-nm Technology Era and Beyond. IEICE Transactions, 89-A(12):3634-3641, 2006. [doi]
@article{MoritaFNKMMNKY06,
title = {A 0.3-V Operating, ::::V::::::th::-Variation-Tolerant SRAM under DVS Environment for Memory-Rich SoC in 90-nm Technology Era and Beyond},
author = {Yasuhiro Morita and Hidehiro Fujiwara and Hiroki Noguchi and Kentaro Kawakami and Junichi Miyakoshi and Shinji Mikami and Koji Nii and Hiroshi Kawaguchi and Masahiko Yoshimoto},
year = {2006},
doi = {10.1093/ietfec/e89-a.12.3634},
url = {http://dx.doi.org/10.1093/ietfec/e89-a.12.3634},
tags = {Meta-Environment},
researchr = {https://researchr.org/publication/MoritaFNKMMNKY06},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {89-A},
number = {12},
pages = {3634-3641},
}