Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell - researchr publication authors

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I. El Moukhtari, Vincent Pouget, C. Larue, F. Darracq, Dean Lewis, Philippe Perdu. Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell. Microelectronics Reliability, 53(9-11):1325-1328, 2013. [doi]

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