F. Darracq - researchr alias

researchr

You are not signed in
Sign in
Sign up

Viewing Publication 1 - 5 from 5

2013

Characterization and modeling of laser-induced single-event burn-out in SiC power diodesN. Mbaye, Vincent Pouget, F. Darracq, Dean Lewis. mr, 53(9-11):1315-1319, 2013. [doi]

Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cellI. El Moukhtari, Vincent Pouget, C. Larue, F. Darracq, Dean Lewis, Philippe Perdu. mr, 53(9-11):1325-1328, 2013. [doi]

2006

Application of various optical techniques for ESD defect localizationF. Essely, F. Darracq, V. Pouget, M. Remmach, Felix Beaudoin, N. Guitard, M. Bafleur, Philippe Perdu, A. Touboul, D. Lewis. mr, 46(9-11):1563-1568, 2006. [doi]

2003

Low-cost backside laser test method to pre-characterize the COTS IC s sensitivity to Single Event EffectsF. Darracq, Hervé Lapuyade, N. Buard, Pascal Fouillat, R. Dufayel, T. Carriere. mr, 43(9-11):1615-1619, 2003. [doi]

2001

A New Laser System for X-Rays Flashes Sensitivity EvaluationD. Lewis, Hervé Lapuyade, Yann Deval, Y. Maidon, F. Darracq, R. Briand, Pascal Fouillat. iolts 2001: 111 [doi]

Sign in or sign up to see more results.

runs on WebDSL