K. Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 4, IEEE, 2018. [doi]
Abstract is missing.