SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage - researchr publication references

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Saibal Mukhopadhyay, Rahul M. Rao, Jae-Joon Kim, Ching-Te Chuang. SRAM Write-Ability Improvement With Transient Negative Bit-Line Voltage. IEEE Trans. VLSI Syst., 19(1):24-32, 2011. [doi]

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