3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs

Daniela Munteanu, Jean-Luc Autran. 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Microelectronics Reliability, 55(9-10):1522-1526, 2015. [doi]

@article{MunteanuA15a,
  title = {3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs},
  author = {Daniela Munteanu and Jean-Luc Autran},
  year = {2015},
  doi = {10.1016/j.microrel.2015.07.022},
  url = {http://dx.doi.org/10.1016/j.microrel.2015.07.022},
  researchr = {https://researchr.org/publication/MunteanuA15a},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {55},
  number = {9-10},
  pages = {1522-1526},
}