Logic-based row redundancy technique designed in 7nm FinFET technology for embedded SRAMs

Vivek Nautiyal, Nishant Nukala, Fakhruddin ali Bohra, Sagar Dwivedi, Jitendra Dasani, Satinderjit Singh, Gaurav Singla, Martin Kinkade. Logic-based row redundancy technique designed in 7nm FinFET technology for embedded SRAMs. In 19th International Symposium on Quality Electronic Design, ISQED 2018, Santa Clara, CA, USA, March 13-14, 2018. pages 274-279, IEEE, 2018. [doi]

@inproceedings{NautiyalNBDDSSK18,
  title = {Logic-based row redundancy technique designed in 7nm FinFET technology for embedded SRAMs},
  author = {Vivek Nautiyal and Nishant Nukala and Fakhruddin ali Bohra and Sagar Dwivedi and Jitendra Dasani and Satinderjit Singh and Gaurav Singla and Martin Kinkade},
  year = {2018},
  doi = {10.1109/ISQED.2018.8357300},
  url = {https://doi.org/10.1109/ISQED.2018.8357300},
  researchr = {https://researchr.org/publication/NautiyalNBDDSSK18},
  cites = {0},
  citedby = {0},
  pages = {274-279},
  booktitle = {19th International Symposium on Quality Electronic Design, ISQED 2018, Santa Clara, CA, USA, March 13-14, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-1214-9},
}