3 nMISFETs after post deposition annealing

Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. 3 nMISFETs after post deposition annealing. IEICE Electronic Express, 3(13):316-321, 2006. [doi]

Abstract

Abstract is missing.