Extending a 65nm CMOS process design kit for high total ionizing dose effects

Aristeidis Nikolaou, Matthias Bucher, Nikos Makris, Alexia Papadopoulou, Loukas Chevas, Giulio Borghello, Henri D. Koch, Kostas Kloukinas, Tuomas S. Poikela, Federico Faccio. Extending a 65nm CMOS process design kit for high total ionizing dose effects. In 7th International Conference on Modern Circuits and Systems Technologies, MOCAST 2018, Thessaloniki, Greece, May 7-9, 2018. pages 1-4, IEEE, 2018. [doi]

Authors

Aristeidis Nikolaou

This author has not been identified. Look up 'Aristeidis Nikolaou' in Google

Matthias Bucher

This author has not been identified. Look up 'Matthias Bucher' in Google

Nikos Makris

This author has not been identified. Look up 'Nikos Makris' in Google

Alexia Papadopoulou

This author has not been identified. Look up 'Alexia Papadopoulou' in Google

Loukas Chevas

This author has not been identified. Look up 'Loukas Chevas' in Google

Giulio Borghello

This author has not been identified. Look up 'Giulio Borghello' in Google

Henri D. Koch

This author has not been identified. Look up 'Henri D. Koch' in Google

Kostas Kloukinas

This author has not been identified. Look up 'Kostas Kloukinas' in Google

Tuomas S. Poikela

This author has not been identified. Look up 'Tuomas S. Poikela' in Google

Federico Faccio

This author has not been identified. Look up 'Federico Faccio' in Google