Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point

Michail Noltsis, Eleni Maragkoudaki, Dimitrios Rodopoulos, Francky Catthoor, Dimitrios Soudris. Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point. In 27th International Symposium on Power and Timing Modeling, Optimization and Simulation, PATMOS 2017, Thessaloniki, Greece, September 25-27, 2017. pages 1-8, IEEE, 2017. [doi]

Abstract

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