FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction - researchr publication authors

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Shin-ichi O uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki. FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction. IEICE Transactions, 91-C(4):534-542, 2008. [doi]

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