Shin-ichi O uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki. FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction. IEICE Transactions, 91-C(4):534-542, 2008. [doi]
@article{OUchiMELMSSKS08,
title = {FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction},
author = {Shin-ichi O uchi and Meishoku Masahara and Kazuhiko Endo and Yongxun Liu and Takashi Matsukawa and Kunihiro Sakamoto and Toshihiro Sekigawa and Hanpei Koike and Eiichi Suzuki},
year = {2008},
doi = {10.1093/ietele/e91-c.4.534},
url = {http://dx.doi.org/10.1093/ietele/e91-c.4.534},
tags = {design},
researchr = {https://researchr.org/publication/OUchiMELMSSKS08},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {91-C},
number = {4},
pages = {534-542},
}