Accurate Modeling of Drain Current Derivatives of MESFET/HEMT Devices for Intermodulation Analysis

Aderinto J. Ogunniyi, Stanley L. Henriquez, Caroline W. Karangu, Corey Dickens, Carl White. Accurate Modeling of Drain Current Derivatives of MESFET/HEMT Devices for Intermodulation Analysis. In International Symposium on Circuits and Systems (ISCAS 2007), 27-20 May 2007, New Orleans, Louisiana, USA. pages 1013-1016, IEEE, 2007. [doi]

Abstract

Abstract is missing.