A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation

Tae-young Oh, Hoeju Chung, Jun-Young Park, Ki Won Lee, Seunghoon Oh, Su-Yeon Doo, Hyoung-Joo Kim, Changyong Lee, Hye-Ran Kim, Jong-Ho Lee, Jin-Il Lee, Kyung-Soo Ha, Young-Ryeol Choi, Young-Chul Cho, Yong-Cheol Bae, Taeseong Jang, Chulsung Park, Kwang-Il Park, Seong-Jin Jang, Joo-Sun Choi. A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation. J. Solid-State Circuits, 50(1):178-190, 2015. [doi]

@article{OhCPLODKLKLLHCCBJPPJC15,
  title = {A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation},
  author = {Tae-young Oh and Hoeju Chung and Jun-Young Park and Ki Won Lee and Seunghoon Oh and Su-Yeon Doo and Hyoung-Joo Kim and Changyong Lee and Hye-Ran Kim and Jong-Ho Lee and Jin-Il Lee and Kyung-Soo Ha and Young-Ryeol Choi and Young-Chul Cho and Yong-Cheol Bae and Taeseong Jang and Chulsung Park and Kwang-Il Park and Seong-Jin Jang and Joo-Sun Choi},
  year = {2015},
  doi = {10.1109/JSSC.2014.2353799},
  url = {http://dx.doi.org/10.1109/JSSC.2014.2353799},
  researchr = {https://researchr.org/publication/OhCPLODKLKLLHCCBJPPJC15},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {50},
  number = {1},
  pages = {178-190},
}