Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs - researchr publication authors

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Reum Oh, ByungHyun Lee, Sang-Woong Shin, Wonil Bae, Hundai Choi, Indal Song, Yun Sang Lee, Jung Hwan Choi, Chi-Wook Kim, Seong-Jin Jang, Joo-Sun Choi. Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs. In Symposium on VLSI Circuits, VLSIC 2014, Digest of Technical Papers, Honolulu, HI, USA, June 10-13, 2014. pages 1-2, IEEE, 2014. [doi]

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