Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs

Reum Oh, ByungHyun Lee, Sang-Woong Shin, Wonil Bae, Hundai Choi, Indal Song, Yun Sang Lee, Jung Hwan Choi, Chi-Wook Kim, Seong-Jin Jang, Joo-Sun Choi. Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs. In Symposium on VLSI Circuits, VLSIC 2014, Digest of Technical Papers, Honolulu, HI, USA, June 10-13, 2014. pages 1-2, IEEE, 2014. [doi]

@inproceedings{OhLSBCSLCKJC14,
  title = {Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs},
  author = {Reum Oh and ByungHyun Lee and Sang-Woong Shin and Wonil Bae and Hundai Choi and Indal Song and Yun Sang Lee and Jung Hwan Choi and Chi-Wook Kim and Seong-Jin Jang and Joo-Sun Choi},
  year = {2014},
  doi = {10.1109/VLSIC.2014.6858367},
  url = {http://dx.doi.org/10.1109/VLSIC.2014.6858367},
  researchr = {https://researchr.org/publication/OhLSBCSLCKJC14},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {Symposium on VLSI Circuits, VLSIC 2014, Digest of Technical Papers, Honolulu, HI, USA, June 10-13, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-3327-3},
}