Tae-young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun Joong Kim, Jin Hyun Kim, Jin Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun. A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction. J. Solid-State Circuits, 46(1):107-118, 2011. [doi]
@article{OhSBPLCKKKKKKKKKLLSYCBYCMPHLPCJ11,
title = {A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction},
author = {Tae-young Oh and Young-Soo Sohn and Seung-Jun Bae and Min-Sang Park and Ji-Hoon Lim and Yong-Ki Cho and Dae-Hyun Kim and Dong-Min Kim and Hye-Ran Kim and Hyun Joong Kim and Jin Hyun Kim and Jin Kook Kim and Young-Sik Kim and Byeong-Cheol Kim and Sang-Hyup Kwak and Jae-Hyung Lee and Jae Young Lee and Chang-Ho Shin and Yun-Seok Yang and Beom-Sig Cho and Sam-Young Bang and Hyang-Ja Yang and Young-Ryeol Choi and Gil-Shin Moon and Cheol-Goo Park and Seokwon Hwang and Jeong-Don Lim and Kwang-Il Park and Joo-Sun Choi and Young-Hyun Jun},
year = {2011},
doi = {10.1109/JSSC.2010.2085991},
url = {http://dx.doi.org/10.1109/JSSC.2010.2085991},
researchr = {https://researchr.org/publication/OhSBPLCKKKKKKKKKLLSYCBYCMPHLPCJ11},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {46},
number = {1},
pages = {107-118},
}