2 die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell

Masayoshi Ohkawa, Hiroshi Sugawara, Naoaki Sudo, Masaru Tsukiji, Ken-ichiro Nakagawa, Masato Kawata, Ken-ichi Oyama, Toshio Takeshima, Shuichi Ohya. 2 die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell. J. Solid-State Circuits, 31(11):1584-1589, 1996. [doi]

Authors

Masayoshi Ohkawa

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Hiroshi Sugawara

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Naoaki Sudo

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Masaru Tsukiji

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Ken-ichiro Nakagawa

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Masato Kawata

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Ken-ichi Oyama

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Toshio Takeshima

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Shuichi Ohya

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