Masayoshi Ohkawa, Hiroshi Sugawara, Naoaki Sudo, Masaru Tsukiji, Ken-ichiro Nakagawa, Masato Kawata, Ken-ichi Oyama, Toshio Takeshima, Shuichi Ohya. 2 die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell. J. Solid-State Circuits, 31(11):1584-1589, 1996. [doi]
@article{OhkawaSSTNKOTO96,
title = {2 die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell},
author = {Masayoshi Ohkawa and Hiroshi Sugawara and Naoaki Sudo and Masaru Tsukiji and Ken-ichiro Nakagawa and Masato Kawata and Ken-ichi Oyama and Toshio Takeshima and Shuichi Ohya},
year = {1996},
doi = {10.1109/JSSC.1996.542302},
url = {https://doi.org/10.1109/JSSC.1996.542302},
researchr = {https://researchr.org/publication/OhkawaSSTNKOTO96},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {31},
number = {11},
pages = {1584-1589},
}