Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Tomoaki Shino, Yoshihiro Minami, Hiroomi Nakajima, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe, Shuso Fujii, Tohru Furuyama. Design of a 128-mb SOI DRAM using the floating body cell (FBC). J. Solid-State Circuits, 41(1):135-145, 2006. [doi]
Abstract is missing.