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Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH::4:: MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures

L. K. Orlov, N. L. Ivina, A. V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J. Horvath. Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH::4:: MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures. Microelectronics Journal, 36(3-6):518-521, 2005. [doi]

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