A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput - researchr publication authors

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Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Keiichi Tsutsui, Tomohito Tsushima, Hiroshi Yoshihara, Tomohiro Namise, Yasuhiro Terao, Kentaro Ogata. A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput. In IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011. pages 210-211, IEEE, 2011. [doi]

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