Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Keiichi Tsutsui, Tomohito Tsushima, Hiroshi Yoshihara, Tomohiro Namise, Yasuhiro Terao, Kentaro Ogata. A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput. In IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011. pages 210-211, IEEE, 2011. [doi]
@inproceedings{OtsukaMKTTYNTO11,
title = {A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput},
author = {Wataru Otsuka and Koji Miyata and Makoto Kitagawa and Keiichi Tsutsui and Tomohito Tsushima and Hiroshi Yoshihara and Tomohiro Namise and Yasuhiro Terao and Kentaro Ogata},
year = {2011},
doi = {10.1109/ISSCC.2011.5746286},
url = {http://dx.doi.org/10.1109/ISSCC.2011.5746286},
researchr = {https://researchr.org/publication/OtsukaMKTTYNTO11},
cites = {0},
citedby = {0},
pages = {210-211},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011},
publisher = {IEEE},
isbn = {978-1-61284-303-2},
}