Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, C. Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, E. Chartier, C. Potier, Sylvain L. Delage. Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. Microelectronics Reliability, 88:418-422, 2018. [doi]
@article{OualliDPAPGLJTL18,
title = {Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes},
author = {Mourad Oualli and Christian Dua and O. Patard and P. Altuntas and S. Piotrowicz and Piero Gamarra and C. Lacam and J.-C. Jacquet and L. Teisseire and D. Lancereau and E. Chartier and C. Potier and Sylvain L. Delage},
year = {2018},
doi = {10.1016/j.microrel.2018.07.142},
url = {https://doi.org/10.1016/j.microrel.2018.07.142},
researchr = {https://researchr.org/publication/OualliDPAPGLJTL18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {88},
pages = {418-422},
}