On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

Dario Pagnano, Giorgia Longobardi, Florin Udrea, Jinming Sun, Mohamed Imam, Reenu Garg, Hyeongnam Kim, Alain Charles. On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs. Microelectronics Reliability, 88:610-614, 2018. [doi]

@article{PagnanoLUSIGKC18,
  title = {On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs},
  author = {Dario Pagnano and Giorgia Longobardi and Florin Udrea and Jinming Sun and Mohamed Imam and Reenu Garg and Hyeongnam Kim and Alain Charles},
  year = {2018},
  doi = {10.1016/j.microrel.2018.07.102},
  url = {https://doi.org/10.1016/j.microrel.2018.07.102},
  researchr = {https://researchr.org/publication/PagnanoLUSIGKC18},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {88},
  pages = {610-614},
}