Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density

Shanmuganathan Palanisamy, Thomas Basler, Josef Lutz, C. Künzel, L. Wehrhahn-Kilian, R. Elpelt. Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-6, IEEE, 2021. [doi]

Authors

Shanmuganathan Palanisamy

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Thomas Basler

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Josef Lutz

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C. Künzel

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L. Wehrhahn-Kilian

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R. Elpelt

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