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A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Shijie Pan, Shiwei Feng 0001, Xuan Li, Kun Bai, Xiaozhuang Lu, Xiang Zheng, Zixuan Feng, Yamin Zhang. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage. IEEE T. Instrumentation and Measurement, 73:1-12, 2024. [doi]

Authors

Shijie Pan

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Shiwei Feng 0001

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Xuan Li

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Kun Bai

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Xiaozhuang Lu

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Xiang Zheng

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Zixuan Feng

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Yamin Zhang

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