A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Shijie Pan, Shiwei Feng 0001, Xuan Li, Kun Bai, Xiaozhuang Lu, Xiang Zheng, Zixuan Feng, Yamin Zhang. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage. IEEE T. Instrumentation and Measurement, 73:1-12, 2024. [doi]

Abstract

Abstract is missing.