A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Shijie Pan, Shiwei Feng 0001, Xuan Li, Kun Bai, Xiaozhuang Lu, Xiang Zheng, Zixuan Feng, Yamin Zhang. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage. IEEE T. Instrumentation and Measurement, 73:1-12, 2024. [doi]

@article{PanFLBLZFZ24,
  title = {A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage},
  author = {Shijie Pan and Shiwei Feng 0001 and Xuan Li and Kun Bai and Xiaozhuang Lu and Xiang Zheng and Zixuan Feng and Yamin Zhang},
  year = {2024},
  doi = {10.1109/TIM.2023.3335518},
  url = {https://doi.org/10.1109/TIM.2023.3335518},
  researchr = {https://researchr.org/publication/PanFLBLZFZ24},
  cites = {0},
  citedby = {0},
  journal = {IEEE T. Instrumentation and Measurement},
  volume = {73},
  pages = {1-12},
}