Back-gate effects and detailed characterization of junctionless transistor

Mukta Singh Parihar, Fan Yu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu. Back-gate effects and detailed characterization of junctionless transistor. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 282-285, IEEE, 2015. [doi]

@inproceedings{PariharLNBBIKC15,
  title = {Back-gate effects and detailed characterization of junctionless transistor},
  author = {Mukta Singh Parihar and Fan Yu Liu and Carlos Navarro and Sylvain Barraud and Maryline Bawedin and Irina Ionica and Abhinav Kranti and Sorin Cristoloveanu},
  year = {2015},
  doi = {10.1109/ESSDERC.2015.7324769},
  url = {http://dx.doi.org/10.1109/ESSDERC.2015.7324769},
  researchr = {https://researchr.org/publication/PariharLNBBIKC15},
  cites = {0},
  citedby = {0},
  pages = {282-285},
  booktitle = {45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015},
  publisher = {IEEE},
  isbn = {978-1-4673-7135-3},
}