Min Hyuk Park. Hafnia-based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. IEEE, 2023. [doi]
@inproceedings{Park23-18,
title = {Hafnia-based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry},
author = {Min Hyuk Park},
year = {2023},
doi = {10.1109/ICICDT59917.2023.10332294},
url = {https://doi.org/10.1109/ICICDT59917.2023.10332294},
researchr = {https://researchr.org/publication/Park23-18},
cites = {0},
citedby = {0},
booktitle = {International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023},
publisher = {IEEE},
isbn = {979-8-3503-1931-6},
}