Hafnia-based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry

Min Hyuk Park. Hafnia-based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. IEEE, 2023. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.