Jong Ho Park, Satoshi Aoyama, Takashi Watanabe, Tomoyuki Akahori, Tomohiko Kosugi, Keigo Isobe, Yuichi Kaneko, Zheng Liu, Kazuki Muramatsu, Takeshi Matsuyama, Takeshi Kawahito. A 0.1e- vertical FPN 4.7e- read noise 71dB DR CMOS image sensor with 13b column-parallel single-ended cyclic ADCs. In IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009. pages 268-269, IEEE, 2009. [doi]
@inproceedings{ParkAvAKIKLMMK09,
title = {A 0.1e- vertical FPN 4.7e- read noise 71dB DR CMOS image sensor with 13b column-parallel single-ended cyclic ADCs},
author = {Jong Ho Park and Satoshi Aoyama and Takashi Watanabe and Tomoyuki Akahori and Tomohiko Kosugi and Keigo Isobe and Yuichi Kaneko and Zheng Liu and Kazuki Muramatsu and Takeshi Matsuyama and Takeshi Kawahito},
year = {2009},
doi = {10.1109/ISSCC.2009.4977411},
url = {http://dx.doi.org/10.1109/ISSCC.2009.4977411},
researchr = {https://researchr.org/publication/ParkAvAKIKLMMK09},
cites = {0},
citedby = {0},
pages = {268-269},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009},
publisher = {IEEE},
isbn = {978-1-4244-3458-9},
}