A 0.1e- vertical FPN 4.7e- read noise 71dB DR CMOS image sensor with 13b column-parallel single-ended cyclic ADCs

Jong Ho Park, Satoshi Aoyama, Takashi Watanabe, Tomoyuki Akahori, Tomohiko Kosugi, Keigo Isobe, Yuichi Kaneko, Zheng Liu, Kazuki Muramatsu, Takeshi Matsuyama, Takeshi Kawahito. A 0.1e- vertical FPN 4.7e- read noise 71dB DR CMOS image sensor with 13b column-parallel single-ended cyclic ADCs. In IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009. pages 268-269, IEEE, 2009. [doi]

Abstract

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