Doping-Optimized Back-illuminated Single-Photon Avalanche Diode in Stacked 40 nm CIS Technology Achieving 60% PDP at 905 nm

Eunsung Park, Won Yong Ha, Doyoon Eom, Dae-Hwan Ahn, Hyuk An, Suhyun Yi, Kyung-Do Kim, Jongchae Kim, Woo-Young Choi, Myung-Jae Lee. Doping-Optimized Back-illuminated Single-Photon Avalanche Diode in Stacked 40 nm CIS Technology Achieving 60% PDP at 905 nm. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

@inproceedings{ParkHEAAYKKCL23,
  title = {Doping-Optimized Back-illuminated Single-Photon Avalanche Diode in Stacked 40 nm CIS Technology Achieving 60% PDP at 905 nm},
  author = {Eunsung Park and Won Yong Ha and Doyoon Eom and Dae-Hwan Ahn and Hyuk An and Suhyun Yi and Kyung-Do Kim and Jongchae Kim and Woo-Young Choi and Myung-Jae Lee},
  year = {2023},
  doi = {10.23919/VLSITechnologyandCir57934.2023.10185229},
  url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185229},
  researchr = {https://researchr.org/publication/ParkHEAAYKKCL23},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
  publisher = {IEEE},
  isbn = {978-4-86348-806-9},
}