A High Back-Off Efficiency Unequal-Stacked Doherty Power Amplifier Achieving 16.7dBm Pavg in a 22nm FDSOI CMOS Technology for 5G FR2 Applications

Seungwon Park, Jooseok Lee, Seungjae Baek, Taewan Kim, Yifei Chen, Sehyug Jeon, Sung-Gi Yang. A High Back-Off Efficiency Unequal-Stacked Doherty Power Amplifier Achieving 16.7dBm Pavg in a 22nm FDSOI CMOS Technology for 5G FR2 Applications. In IEEE International Solid-State Circuits Conference, ISSCC 2026, San Francisco, CA, USA, February 15-19, 2026. pages 342-344, IEEE, 2026. [doi]

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