16.8 A 60Mb/s TRNG with PVT-Variation-Tolerant Design Based on STR in 4nm

Jieun Park, Yong Ki Lee, Bohdan Karpinskyy, Yunhyeok Choi, Jonghoon Shin, Hyo-Gyuem Rhew, Jongshin Shin. 16.8 A 60Mb/s TRNG with PVT-Variation-Tolerant Design Based on STR in 4nm. In IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. pages 310-312, IEEE, 2024. [doi]

Authors

Jieun Park

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Yong Ki Lee

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Bohdan Karpinskyy

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Yunhyeok Choi

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Jonghoon Shin

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Hyo-Gyuem Rhew

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Jongshin Shin

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