16.8 A 60Mb/s TRNG with PVT-Variation-Tolerant Design Based on STR in 4nm

Jieun Park, Yong Ki Lee, Bohdan Karpinskyy, Yunhyeok Choi, Jonghoon Shin, Hyo-Gyuem Rhew, Jongshin Shin. 16.8 A 60Mb/s TRNG with PVT-Variation-Tolerant Design Based on STR in 4nm. In IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. pages 310-312, IEEE, 2024. [doi]

Abstract

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