7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation

JongEun Park, Sungbong Park, Kwansik Cho, Taehun Lee, ChangKyu Lee, Donghyun Kim, Beomsuk Lee, SungIn Kim, Ho-Chul Ji, Dongmo Im, Haeyong Park, Jinyoung Kim, Jungho Cha, Tae Hoon Kim, Insung Joe, Soojin Hong, Chongkwang Chang, Jingyun Kim, WooGwan Shim, Taehee Kim, Jamie Lee, Donghyuk Park, Euiyeol Kim, Howoo Park, Jaekyu Lee, Yitae Kim, JungChak Ahn, Youngki Hong, ChungSam Jun, Hyunchul Kim, Chang-Rok Moon, Ho-Kyu Kang. 7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation. In IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, CA, USA, February 13-22, 2021. pages 122-124, IEEE, 2021. [doi]

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