A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique - researchr publication

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Dae-Woong Park, Dzuhri Radityo Utomo, Jong-Phil Hong, Kristof Vaesen, Piet Wambacq, Sang-Gug Lee. A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique. In IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020. pages 1-2, IEEE, 2020. [doi]

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