A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline and Enhanced Write and Read Operations

Ghasem Pasandi, Sied Mehdi Fakhraie. A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline and Enhanced Write and Read Operations. IEEE Trans. VLSI Syst., 23(11):2438-2446, 2015. [doi]

Abstract

Abstract is missing.