Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors - researchr publication authors

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Deven G. Patanvariya, Sudhan Kumar, Lalat Indu Giri. Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. In 10th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2019, Kanpur, India, July 6-8, 2019. pages 1-5, IEEE, 2019. [doi]

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