Deven G. Patanvariya, Sudhan Kumar, Lalat Indu Giri. Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. In 10th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2019, Kanpur, India, July 6-8, 2019. pages 1-5, IEEE, 2019. [doi]
@inproceedings{PatanvariyaKG19,
title = {Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors},
author = {Deven G. Patanvariya and Sudhan Kumar and Lalat Indu Giri},
year = {2019},
doi = {10.1109/ICCCNT45670.2019.8944458},
url = {https://doi.org/10.1109/ICCCNT45670.2019.8944458},
researchr = {https://researchr.org/publication/PatanvariyaKG19},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {10th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2019, Kanpur, India, July 6-8, 2019},
publisher = {IEEE},
isbn = {978-1-5386-5906-9},
}