Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors - researchr publication related

researchr

You are not signed in
Sign in
Sign up

Deven G. Patanvariya, Sudhan Kumar, Lalat Indu Giri. Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. In 10th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2019, Kanpur, India, July 6-8, 2019. pages 1-5, IEEE, 2019. [doi]

The following publications are possibly variants of this publication:

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gateD. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh. mj, 118:105293, 2021. [doi]

runs on WebDSL