Nishad Patil, Jose Celaya, Diganta Das, Kai Goebel, Michael G. Pecht. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics. IEEE Transactions on Reliability, 58(2):271-276, 2009. [doi]
@article{PatilCDGP09,
title = {Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics},
author = {Nishad Patil and Jose Celaya and Diganta Das and Kai Goebel and Michael G. Pecht},
year = {2009},
doi = {10.1109/TR.2009.2020134},
url = {http://dx.doi.org/10.1109/TR.2009.2020134},
researchr = {https://researchr.org/publication/PatilCDGP09},
cites = {0},
citedby = {0},
journal = {IEEE Transactions on Reliability},
volume = {58},
number = {2},
pages = {271-276},
}