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Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

Nishad Patil, Jose Celaya, Diganta Das, Kai Goebel, Michael G. Pecht. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics. IEEE Transactions on Reliability, 58(2):271-276, 2009. [doi]

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