A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography

Juan Mata Pavia, Mario Scandini, Scott Lindner, Martin Wolf, Edoardo Charbon. A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography. J. Solid-State Circuits, 50(10):2406-2418, 2015. [doi]

Abstract

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