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Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi. Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. Microelectronics Reliability, 54(4):730-737, 2014. [doi]
Abstract is missing.